NSN 5961-01-613-2003
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-613-2003 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: IRFR120N, 5961-01-613-2003, 01-613-2003, 5961016132003, 016132003
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 01, 2012 | 01-613-2003 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-613-2003
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| IRFR120N | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
Technical Data | NSN 5961-01-613-2003
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BCK100.0 MINIMUM |
| CURRENT RATING PER CHARACTERISTIC | BZ9.4 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATAAG48.0 WATTS |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| OVERALL LENGTH | 0.37 INCHES MINIMUM AND 0.41 INCHES MAXIMUM |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | HEXFET, POWER MOSFET, SURFACE MOUNT |