NSN 5961-01-624-7504
Part Details | TRANSISTOR
5961-01-624-7504 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: MRF9130LR3, 5961-01-624-7504, 01-624-7504, 5961016247504, 016247504
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 14, 2014 | 01-624-7504 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-624-7504
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MRF9130LR3 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
Technical Data | NSN 5961-01-624-7504
| Characteristic | Specifications |
|---|---|
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | A5.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | CKCBR10.0 MICROAMPERES |
| POWER RATING PER CHARACTERISTIC | ATAAG298.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| OVERALL LENGTH | 1.335 INCHES MINIMUM AND 1.345 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.125 INCHES MINIMUM AND 0.170 INCHES MAXIMUM |
| OVERALL WIDTH | 0.380 INCHES MINIMUM AND 0.390 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | PROGRAMMABLE TRANSISTOR |
| FEATURES PROVIDED | GOLD PLATED LEADS |
| SPECIAL FEATURES | IN TAPE AND REEL, R3 SUFFIX= 250 UNITS PER 56MM, 13 INCH REEL; ROHS COMPLIANT; DESIGNED FOR GSM AND GSM EDGE BASE STATION APPLICATIONS WITH FREQUENCIES FROM 921 TO 960 MHZ; DESIGNED FOR MAX GAIN AND INSTERTION PHASE FLATNESS; HIGH GAIN AND BROADBAND PERFORMANCE OF THESE DEVICES MAKE THEM IDEAL FOR LARGE SIGNAL, COMMON SOURCE AMPLIFIER APPLICATIONS IN 28 VOLT BASE STATIONS; HIGH EFFICIENCY; HIGH LINEARITY; INTEGRATED ESD PROTECTION |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | RF POWER FIELD EFFECT TRANSISTOR |