NSN 5961-01-624-7505
Part Details | TRANSISTOR
5961-01-624-7505 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: MRF9100LR3, MRF5S9080NBR1, 5961-01-624-7505, 01-624-7505, 5961016247505, 016247505
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 14, 2014 | 01-624-7505 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-624-7505
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MRF9100LR3 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| MRF5S9080NBR1 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
Technical Data | NSN 5961-01-624-7505
| Characteristic | Specifications |
|---|---|
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BAXM0.5 MINIMUM AND CAX65.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | CKCBR1.0 MICROAMPERES |
| POWER RATING PER CHARACTERISTIC | ATACK110.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZM150.0 DEG CELSIUS AND CAZN200.0 DEG CELSIUS |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| OVERALL LENGTH | 1.335 INCHES MINIMUM AND 1.345 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.125 INCHES MINIMUM AND 0.170 INCHES MAXIMUM |
| OVERALL WIDTH | 0.380 INCHES MINIMUM AND 0.390 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | PROGRAMMABLE TRANSISTOR |
| SPECIAL FEATURES | IN TAPE AND REEL, R3 SUFFIX=250 UNITS PER 56MM, 13 INCH REEL; ROHS COMPLIANT; DESIGNED FOR GSM AND EDGE BASE STATION APPLICATIONS WITH FREQUENCIES FROM 921 TO 960 MHZ; MAX GAIN; INSERTION PHASE FLATNESS; IDEAL FOR LARGE-SIGNAL COMMON SOURCE AMPLIFIER APPLICATIONS IN 26 VOLT BASE STATION EQUIPMENT; INTEGRATED ESD PROTECTION; EXCELLENT THERMAL STABILITY |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | RF POWER FIELD EFFECT TRANSISTORS |