NSN 5961-01-627-5697
Part Details | TRANSISTOR
5961-01-627-5697 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: MII15012A4, MII150-12A4, 5961-01-627-5697, 01-627-5697, 5961016275697, 016275697
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 18, 2014 | 01-627-5697 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-627-5697
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MII150-12A4 | 0A5K5 | IXYS CORPORATION |
Technical Data | NSN 5961-01-627-5697
| Characteristic | Specifications |
|---|---|
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | BASE |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 4 |
| OVERALL LENGTH | 110.0 MILLIMETERS NOMINAL |
| OVERALL HEIGHT | 30.0 MILLIMETERS NOMINAL |
| OVERALL WIDTH | 62.0 MILLIMETERS NOMINAL |
| SPECIAL FEATURES | 1200 VOLT MAX; 760 WATTS; HIGH SHORT CIRCUIT CAPABILITY; MOS INPUT, VOLTAGE CONTROLLED; UP TO 30 KHZ SWITCHING FREQUENCY;ULTRA FAST WHEELING DIODE; LOW SATURATION VOLTAGE; LOW SWITCHING LOSSES |