NSN 5961-01-633-0083
Part Details | UNITIZED SEMICONDUCTOR DEVICES
5961-01-633-0083 Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
Alternate Parts: IRGP4063DPBF, 5961-01-633-0083, 01-633-0083, 5961016330083, 016330083
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 05, 2014 | 01-633-0083 | 61962 ( SEMICONDUCTOR DEVICES, UNITIZED ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-633-0083
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| IRGP4063DPBF | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
Technical Data | NSN 5961-01-633-0083
| Characteristic | Specifications |
|---|---|
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN175.0 DEG CELSIUS |
| OVERALL LENGTH | 1.449 INCHES MAXIMUM |
| OVERALL WIDTH | 0.625 INCHES MAXIMUM |
| FEATURES PROVIDED | VERY HIGH SPEED |
| SPECIAL FEATURES | COLLECTOR-TO-EMITTER VOLT 600V MAX;CONTINUOUS COLLECTOR CURRENT AT 25 DEG CELCIUS IS 96 AMPS;CONTINUOUS COLLECTOR CURRENT AT 100 DEG CELCIUS IS 48 AMPS;CLAMP INDUCTIVE LOAD CURRENT 192 AMPS. |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | INSOLATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. |