NSN 5961-01-641-5820
Part Details | TRANSISTOR
5961-01-641-5820 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: MS2393, 5961-01-641-5820, 01-641-5820, 5961016415820, 016415820
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 27, 2015 | 01-641-5820 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-641-5820
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MS2393 | 9Z454 | MICROSEMI CORP- RF INTEGRATEDSOLUTIONS |
Technical Data | NSN 5961-01-641-5820
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON ALLOY |
| CURRENT RATING PER CHARACTERISTIC | BACEL10.0 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATAAF583.0 WATTS |
| INCLOSURE MATERIAL | CERAMIC AND METAL |
| OVERALL LENGTH | 0.895 INCHES MINIMUM AND 0.906 INCHES MAXIMUM |
| SPECIAL FEATURES | DESIGNED FOR HIGH POWER PULSE IFF, DME, AND TACAN; APPLICATIONS; 200 W (TYP.) IFF 1030 - 1090 MHZ; 150 W (MIN.) DME 1025 - 1150 MHZ; 140 W (TYP.) TACAN 960 - 1215 MHZ; 8.2 DB GAIN; REFRACTORY GOLD METALLIZATION; BALLASTING ANDLOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS; 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS; |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | RF AND MICROWAVE TRANSISTOR |