NSN 5961-01-650-8669
Part Details | TRANSISTOR
5961-01-650-8669 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: SUM110P0607LE3, SUM110P06-07L-E3, 5961-01-650-8669, 01-650-8669, 5961016508669, 016508669
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 18, 2015 | 01-650-8669 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-650-8669
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| SUM110P06-07L-E3 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-650-8669
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | ACK20.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | AD110.0 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATAAC375.0 WATTS |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 9.652 MILLIMETERS MAXIMUM |
| OVERALL HEIGHT | 4.826 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 10.414 MILLIMETERS MAXIMUM |
| END ITEM IDENTIFICATION | V-22 AIRCRAFT |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | TRANS MOSFET P-CH |