NSN 5961-01-650-9225
Part Details | TRANSISTOR
5961-01-650-9225 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: SI2308DST1E3, SI2308DS-T1-E3, 5961-01-650-9225, 01-650-9225, 5961016509225, 016509225
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 21, 2015 | 01-650-9225 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-650-9225
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| SI2308DS-T1-E3 | 91637 | VISHAY DALE ELECTRONICS, LLCDBA VISHAY INTERTECHNOLOGY |
Technical Data | NSN 5961-01-650-9225
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | ACK60.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | AD2.0 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATAAC1.25 WATTS |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 3.0 MILLIMETERS MAXIMUM |
| OVERALL HEIGHT | 1.4 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 1.1 MILLIMETERS MAXIMUM |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | TRANS MOSFET N-CH |