NSN 5961-01-651-0387
Part Details | TRANSISTOR
5961-01-651-0387 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: SI7460DPT1E3, SI7460DP-T1-E3, 5961-01-651-0387, 01-651-0387, 5961016510387, 016510387
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 30, 2015 | 01-651-0387 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-651-0387
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| SI7460DP-T1-E3 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-651-0387
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | A0.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | AD11.0 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATACQ1.9 WATTS |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 8 BONDING PAD |
| OVERALL LENGTH | 5.89 MILLIMETERS NOMINAL |
| OVERALL HEIGHT | 1.04 MILLIMETERS NOMINAL |
| OVERALL WIDTH | 3.81 MILLIMETERS NOMINAL |
| END ITEM IDENTIFICATION | V-22 AIRCRAFT |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | TRANS MOSFET N-CH |