NSN 5962-01-111-7464
Part Details | DIGITAL MICROCIRCUIT
5962-01-111-7464 A microcircuit specifically designed to generate, modify, or process electrical signals which operate with two distinct or binary states. These states are commonly referred to as on and off, true and false, high and low, or "1" and "0".
Alternate Parts: ROMPROM FAMILY 008, ROM/PROM FAMILY 008, 72290650, 722906-50, 456571, 45657-1, 5962-01-111-7464, 01-111-7464, 5962011117464, 011117464
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 23, 1981 | 01-111-7464 | 31779 ( MICROCIRCUIT, DIGITAL ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-111-7464
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| ROM/PROM FAMILY 008 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 722906-50 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 45657-1 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5962-01-111-7464
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| INPUT CIRCUIT PATTERN | 10 INPUT |
| TIME RATING PER CHACTERISTIC | NSAAEE70.00 NANOSECONDS |
| WORD QUANTITY | 512 |
| BIT QUANTITY | 2048 |
| OPERATING TEMP RANGE | -0.0 TO +75.0 DEG CELSIUS |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | MONOLITHIC AND PROGRAMMABLE AND 3-STATE OUTPUT |
| TEST DATA DOCUMENT | 05869-726009-1 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |