NSN 5962-01-197-8703
Part Details | MEMORY MICROCIRCUIT
5962-01-197-8703 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: AM214845DMB, AM2148-45DM-B, AM214845BVA, AM2148-45/BVA, AM214855BVA, AM2148-55/BVA, 312234003, 312234-003, CY214855DMB, CY2148-55DMB, CY214855DBM, CY2148-55DBM, ES545502, ES5455-02, 5962PL0930421, 790841905, 7908419-05, G303488103, G303488-103, G1113971, G111397-1, SYMC2148H2, SYMC2148H-2, 5962-01-197-8703, 01-197-8703, 5962011978703, 011978703
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 29, 1984 | 01-197-8703 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-197-8703
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| AM2148-45DM-B | 34335 | ADVANCED MICRO DEVICES, INC.DBA A M D |
| AM2148-45/BVA | 34335 | ADVANCED MICRO DEVICES, INC.DBA A M D |
| AM2148-55/BVA | 34335 | ADVANCED MICRO DEVICES, INC.DBA A M D |
| 312234-003 | 81413 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
| CY2148-55DMB | 65786 | CYPRESS SEMICONDUCTOR CORPORATIONDBA CYPRESS |
| CY2148-55DBM | 65786 | CYPRESS SEMICONDUCTOR CORPORATIONDBA CYPRESS |
| ES5455-02 | 20418 | DRS SUSTAINMENT SYSTEMS, INC.Use CAGE Code 98255 for cataloging |
| 5962PL0930421 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
| 7908419-05 | 90536 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| G303488-103 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G111397-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| SYMC2148H-2 | 55576 | SYNERTEK |
Technical Data | NSN 5962-01-197-8703
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| INPUT CIRCUIT PATTERN | 16 INPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACVM3.5 VOLTS MINIMUM AND ACV7.0 VOLTS MAXIMUM |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-6 MIL-M-38510 |
| BODY LENGTH | 0.960 INCHES MAXIMUM |
| BODY HEIGHT | 0.185 INCHES NOMINAL |
| BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| MAXIMUM POWER DISSIPATION RATING | 1200.0 MILLIWATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND HERMETICALLY SEALED |
| SPECIAL FEATURES | BIT QUANTITY 4096; WORD QUANTITY 1024 |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |