NSN 5962-01-229-4030
Part Details | MEMORY MICROCIRCUIT
5962-01-229-4030 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: AM27S49BJA, AM27S49/BJA, 8200901JX, 8200901JX, 8200901JB, 8200901JA, 82009I1JA, 82009, ROMPROM HEAD 086, ROM/PROM HEAD 086, HM1766418, HM1-76641-8, 0N3865251, 0N386525-1, 93Z665DMQB65, 82HS641ABJA, 82HS641A/BJA, 5962-01-229-4030, 01-229-4030, 5962012294030, 012294030
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 31, 1986 | 01-229-4030 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-229-4030
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| AM27S49/BJA | 34335 | ADVANCED MICRO DEVICES, INC.DBA A M D |
| 8200901JX | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 8200901JX | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 8200901JB | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 8200901JA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 82009I1JA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 82009 | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| ROM/PROM HEAD 086 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| HM1-76641-8 | 34371 | INTERSIL CORPORATIONDIV NA |
| 0N386525-1 | 98230 | NATIONAL SECURITY AGENCY |
| 93Z665DMQB65 | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| 82HS641A/BJA | 18324 | PHILIPS SEMICONDUCTORS INC |
Technical Data | NSN 5962-01-229-4030
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| INPUT CIRCUIT PATTERN | 14 INPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACV7.0 VOLTS MAXIMUM |
| TIME RATING PER CHACTERISTIC | NSCAEE100.00 NANOSECONDS AND NSCAED100.00 NANOSECONDS |
| MEMORY DEVICE TYPE | ROM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| BODY LENGTH | 1.290 INCHES MAXIMUM |
| BODY HEIGHT | 0.210 INCHES MAXIMUM |
| BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| MAXIMUM POWER DISSIPATION RATING | 1.04 WATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND W/ENABLE |
| TEST DATA DOCUMENT | 14933-82009 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |