NSN 5962-01-231-5886
Part Details | DIGITAL MICROCIRCUIT
5962-01-231-5886 A microcircuit specifically designed to generate, modify, or process electrical signals which operate with two distinct or binary states. These states are commonly referred to as on and off, true and false, high and low, or "1" and "0".
Alternate Parts: 26068031, 2606803-1, G0005039003, G000503-9003, 6068031, 606803-1, 54F10FMBQ, 3UI900351X, U3I900351X, 54F10BDAJC, 54F10/BDAJC, 61345431, 6134543-1, 9003FM, 59623833003BDX, 5962-3833003BDX, 59623833003BDB, 5962-3833003BDB, 59623833003BDA, 5962-3833003BDA, M3851033003BDA, M38510/33003BDA, M3851033003BAX, M38510/33003BAX, M3851033003BDX, M38510-33003BDX, MILM38510330, MIL-M-38510/330, 54F10BDA, 54F10/BDA, 5962-01-231-5886, 01-231-5886, 5962012315886, 012315886
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 30, 1986 | 01-231-5886 | 31779 ( MICROCIRCUIT, DIGITAL ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-231-5886
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2606803-1 | 06424 | ALLIANT TECHSYSTEMS OPERATIONS LLCDIV DEFENSE ELECTRONIC SYSTEMS |
| G000503-9003 | 05935 | CALIFORNIA AVI-TRON CORP |
| 606803-1 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 54F10FMBQ | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 3UI900351X | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| U3I900351X | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 54F10/BDAJC | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 6134543-1 | 03640 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| 9003FM | 20859 | MELLOWES CODIV OF CHARTER MFG CO INC |
| 5962-3833003BDX | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 5962-3833003BDB | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 5962-3833003BDA | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| M38510/33003BDA | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| M38510/33003BAX | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| M38510-33003BDX | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-M-38510/330 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 54F10/BDA | 18324 | PHILIPS SEMICONDUCTORS INC |
Technical Data | NSN 5962-01-231-5886
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| DESIGN FUNCTION AND QUANTITY | 3 GATE, NAND |
| INPUT CIRCUIT PATTERN | TRIPLE 3 INPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACV7.0 VOLTS MAXIMUM |
| TIME RATING PER CHACTERISTIC | NSCAEE7.00 NANOSECONDS AND NSCAED6.50 NANOSECONDS |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 14 FLAT LEADS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | FLAT PACK |
| INCLOSURE MATERIAL | CERAMIC |
| CASE OUTLINE SOURCE AND DESIGNATOR | F-2 MIL-M-38510 |
| BODY LENGTH | 0.390 INCHES MAXIMUM |
| BODY HEIGHT | 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM |
| BODY WIDTH | 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| MAXIMUM POWER DISSIPATION RATING | 42.0 MILLIWATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND MONOLITHIC |
| SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEMS |
| TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510 TO 330 GOVERNMENT SPECIFICATION |
| NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |