NSN 5962-01-232-3425

Part Details | MEMORY MICROCIRCUIT

5962-01-232-3425 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.

Alternate Parts: ROMPROM HEAD 012, ROM/PROM HEAD 012, ROMPROM HEAD 089, ROM/PROM HEAD 089, SL82S100BYA, SL82S100/BYA, 586R736H02, CC1881W, CC1881R, 82S100BYA, 82S100/BYA, S82S100R, 9327211B, 932721-1B, QP82S100BYAMIL, QP82S100/BYA-MIL, 5962-01-232-3425, 01-232-3425, 5962012323425, 012323425

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAY 11, 198601-232-342541015 ( MICROCIRCUIT, MEMORY )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-232-3425
Part Number Cage Code Manufacturer
ROM/PROM HEAD 01216236DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
ROM/PROM HEAD 08916236DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
SL82S100/BYA58625LANSDALE SEMICONDUCTOR, INC.
586R736H0297942NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV NORTHROP GRUMMAN SYSTEMS
CC1881W18324PHILIPS SEMICONDUCTORS INC
CC1881R18324PHILIPS SEMICONDUCTORS INC
82S100/BYA18324PHILIPS SEMICONDUCTORS INC
S82S100R18324PHILIPS SEMICONDUCTORS INC
932721-1B82577RAYTHEON COMPANYDBA RAYTHEON
QP82S100/BYA-MIL0C7V7TELEDYNE E2V US, INC.DBA TELEDYNE E2V (US)
Technical Data | NSN 5962-01-232-3425
Characteristic Specifications
VOLTAGE RATING AND TYPE PER CHARACTERISTICACV7.0 VOLTS MAXIMUM
TIME RATING PER CHACTERISTICNSCADR80.00 NANOSECONDS
MEMORY DEVICE TYPE PAL
OPERATING TEMP RANGE-55.0 TO +125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY28 FLAT LEADS
TERMINAL SURFACE TREATMENT SOLDER
INCLOSURE CONFIGURATION FLAT PACK
INCLOSURE MATERIAL CERAMIC
PART NAME ASSIGNED BY CONTROLLING AGENCYPROGRAMMABLE PAL
FEATURES PROVIDED PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT