NSN 5962-01-250-6929
Part Details | MEMORY MICROCIRCUIT
5962-01-250-6929 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: 3053207P2, ROMPROM, ROM/PROM, M3851020602BVA, M38510/20602BVA, 5962-01-250-6929, 01-250-6929, 5962012506929, 012506929
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 06, 1987 | 01-250-6929 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-250-6929
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 3053207P2 | 94117 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| ROM/PROM | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| M38510/20602BVA | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5962-01-250-6929
| Characteristic | Specifications |
|---|---|
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACVM0.5 VOLTS MINIMUM AND ACV7.0 VOLTS MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACHG140.00 MILLIAMPERES NOMINAL |
| TIME RATING PER CHACTERISTIC | NSCAED85.00 NANOSECONDS AND NSCAEE85.00 NANOSECONDS |
| MEMORY DEVICE TYPE | PROM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| MAXIMUM POWER DISSIPATION RATING | 794.0 MILLIWATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | PROGRAMMED AND SCHOTTKY AND BIPOLAR AND 3-STATE OUTPUT AND MONOLITHIC AND W/ENABLE |