NSN 5962-01-260-8680
Part Details | MEMORY MICROCIRCUIT
5962-01-260-8680 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: 59623829409MXX, 5962-3829409MXX, 59623829409MXB, 5962-3829409MXB, 59623829409MXA, 5962-3829409MXA, 596238294, 5962-38294, 8552505XA, 59628552505XX, 5962-8552505XX, 59628552505XB, 5962-8552505XB, 59628552505XA, 5962-8552505XA, 596285525, 5962-85525, IDT7164S55DB, IDT7164L55DB, HM1E65764N883, HM1E-65764N/883, 0N4441112, 0N444111-2, 4152454, 415-2454, P4C16455DWMB, P4C164-55DWMB, 7201398097, 72-01398-097, 99165736, 5962-01-260-8680, 01-260-8680, 5962012608680, 012608680
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 05, 1987 | 01-260-8680 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-260-8680
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 5962-3829409MXX | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-3829409MXB | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-3829409MXA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-38294 | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 8552505XA | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8552505XX | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8552505XB | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8552505XA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-85525 | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| IDT7164S55DB | 61772 | INTEGRATED DEVICE TECHNOLOGY INC |
| IDT7164L55DB | 61772 | INTEGRATED DEVICE TECHNOLOGY INC |
| HM1E-65764N/883 | 0HGZ7 | MATRA-HARRIS SEMICONDUCTOR |
| 0N444111-2 | 98230 | NATIONAL SECURITY AGENCY |
| 415-2454 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
| P4C164-55DWMB | 75569 | PERFORMANCE SEMICONDUCTOR CORP |
| 72-01398-097 | 00724 | RAYTHEON COMPANYDBA RAYTHEON |
| 99165736 | F6481 | THALES SA |
Technical Data | NSN 5962-01-260-8680
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| INPUT CIRCUIT PATTERN | 21 INPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACVM3.0 VOLTS MINIMUM AND ACV7.0 VOLTS MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACHG125.00 MILLIAMPERES NOMINAL |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| BODY LENGTH | 1.490 INCHES MAXIMUM |
| BODY HEIGHT | 0.232 INCHES MAXIMUM |
| BODY WIDTH | 0.610 INCHES MAXIMUM |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |