NSN 5962-01-262-0193
Part Details | MEMORY MICROCIRCUIT
5962-01-262-0193 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: AM216855BRA, AM2168-55/BRA, 59628608101RX, 5962-8608101RX, 59628608101RB, 5962-8608101RB, 59628608101RA, 5962-8608101RA, 59628608101BRX, 5962-8608101BRX, 59628608101BRB, 5962-8608101BRB, 59628608101BRA, 5962-8608101BRA, 596286081, 5962-86081, MB816855, MB8168-55, 7546405P502, AM216855BRA, AM2168-55/BRA, 6104942, 5860915, 71736761, 717367-61, A9841, A984-1, 5962-01-262-0193, 01-262-0193, 5962012620193, 012620193
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 21, 1987 | 01-262-0193 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-262-0193
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| AM2168-55/BRA | 34335 | ADVANCED MICRO DEVICES, INC.DBA A M D |
| 5962-8608101RX | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8608101RB | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8608101RA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8608101BRX | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8608101BRB | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8608101BRA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-86081 | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| MB8168-55 | 3R731 | FUJITSU AMERICA INC |
| 7546405P502 | 99971 | LOCKHEED MARTIN CORPNAVAL ELECTRONICS & SURVEILLANCE |
| AM2168-55/BRA | 0HW02 | MSIS SEMICONDUCTOR INC |
| 6104942 | 53711 | NAVAL SEA SYSTEMS COMMAND |
| 5860915 | 53711 | NAVAL SEA SYSTEMS COMMAND |
| 717367-61 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| A984-1 | 36378 | RAYTHEON TECHNICAL SERVICES COMPANY |
Technical Data | NSN 5962-01-262-0193
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| INPUT CIRCUIT PATTERN | 20 INPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACV7.0 VOLTS MAXIMUM |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | 0$DCLD000$DPCA000 |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| BODY LENGTH | 1.060 INCHES MAXIMUM |
| BODY HEIGHT | 0.185 INCHES MAXIMUM |
| BODY WIDTH | 0.310 INCHES MAXIMUM |
| MAXIMUM POWER DISSIPATION RATING | 1.2 WATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | MONOLITHIC AND STATIC OPERATION |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |