NSN 5962-01-265-8171
Part Details | MEMORY MICROCIRCUIT
5962-01-265-8171 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: 8510203YA, 85102, ROMPROM HEAD 177, ROM/PROM HEAD 177, 8510203YX, 8510203YB, MD27C6420B, MD27C64-20/B, VA850708004, VA-85-0708-004, VA850708001, VA-85-0708-001, NMC27C64Q20883, NMC27C64Q20/883, 585R630H03, 27C64ABXA20, 27C64A/BXA-20, MD27C6420BYA, MD27C64-20/BYA, 3515744062, 351-5744-062, 27C6420YA, 27C64-20/YA, 5962-01-265-8171, 01-265-8171, 5962012658171, 012658171
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 17, 1987 | 01-265-8171 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-265-8171
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 8510203YA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 85102 | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| ROM/PROM HEAD 177 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 8510203YX | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 8510203YB | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| MD27C64-20/B | 34649 | INTEL CORP SALES OFFICE |
| VA-85-0708-004 | K0668 | LEONARDO MW LTD |
| VA-85-0708-001 | K0668 | LEONARDO MW LTD |
| NMC27C64Q20/883 | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| 585R630H03 | 97942 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV NORTHROP GRUMMAN SYSTEMS |
| 27C64A/BXA-20 | 18324 | PHILIPS SEMICONDUCTORS INC |
| MD27C64-20/BYA | 3V146 | ROCHESTER ELECTRONICS, LLC |
| 351-5744-062 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| 27C64-20/YA | 0C7V7 | TELEDYNE E2V US, INC.DBA TELEDYNE E2V (US) |
Technical Data | NSN 5962-01-265-8171
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| INPUT CIRCUIT PATTERN | 16 INPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACVM2.0 VOLTS MINIMUM AND ACV7.0 VOLTS MAXIMUM |
| MEMORY DEVICE TYPE | PROM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| BODY LENGTH | 1.490 INCHES MAXIMUM |
| BODY HEIGHT | 0.210 INCHES MAXIMUM |
| BODY WIDTH | 0.610 INCHES MAXIMUM |
| MAXIMUM POWER DISSIPATION RATING | 170.0 MILLIWATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND W/ENABLE |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |