NSN 5962-01-267-8169
Part Details | MEMORY MICROCIRCUIT
5962-01-267-8169 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: CY7C16755, CY7C167-55, 7950661, 795066-1, IDT6167LA55LB, 790955945, 7909559-45, UPD2167, 10133816, P4C167L55LMB, P4C167L-55LMB, 5962-01-267-8169, 01-267-8169, 5962012678169, 012678169
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 18, 1987 | 01-267-8169 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-267-8169
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| CY7C167-55 | 65786 | CYPRESS SEMICONDUCTOR CORPORATIONDBA CYPRESS |
| 795066-1 | 73030 | HAMILTON SUNDSTRAND CORPORATION |
| IDT6167LA55LB | 61772 | INTEGRATED DEVICE TECHNOLOGY INC |
| 7909559-45 | 90536 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| UPD2167 | 4T165 | NEC ELECTRONICS U S A INCELECTRON DIV |
| 10133816 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
| P4C167L-55LMB | 3DTT2 | PYRAMID SEMICONDUCTOR CORP |
Technical Data | NSN 5962-01-267-8169
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| INPUT CIRCUIT PATTERN | 17 INPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACV7.0 VOLTS MAXIMUM |
| TIME RATING PER CHACTERISTIC | NSCAEE55.00 NANOSECONDS AND NSCAED55.00 NANOSECONDS |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 20 LEADLESS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| INCLOSURE MATERIAL | CERAMIC |
| BODY LENGTH | 0.425 INCHES NOMINAL |
| BODY HEIGHT | 0.065 INCHES NOMINAL |
| BODY WIDTH | 0.290 INCHES NOMINAL |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND W/ENABLE |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |