NSN 5962-01-268-1918
Part Details | MEMORY MICROCIRCUIT
5962-01-268-1918 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: ROMPROM, ROM/PROM, 810AS2509, 810AS25081, 810AS2508-1, 810AS1238, 810AS25081, 810AS2508-1, 810AS25081, 810AS2508-1, 810AS25081, 810AS2508-1, 5962-01-268-1918, 01-268-1918, 5962012681918, 012681918
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 24, 1987 | 01-268-1918 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-268-1918
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| ROM/PROM | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 810AS2509 | 30003 | NAVAL AIR SYSTEMS COMMAND MANAGEDORIGINAL DESIGN ACTIVITY NOT |
| 810AS2508-1 | 30003 | NAVAL AIR SYSTEMS COMMAND MANAGEDORIGINAL DESIGN ACTIVITY NOT |
| 810AS1238 | 30003 | NAVAL AIR SYSTEMS COMMAND MANAGEDORIGINAL DESIGN ACTIVITY NOT |
| 810AS2508-1 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 810AS2508-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 810AS2508-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5962-01-268-1918
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC |
| INPUT CIRCUIT PATTERN | 13 INPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACV5.5 VOLTS MAXIMUM |
| MEMORY DEVICE TYPE | ROM |
| WORD QUANTITY | 2048 |
| BIT QUANTITY | 16384 |
| OPERATING TEMP RANGE | -0.0 TO +70.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| BODY LENGTH | 1.245 INCHES MAXIMUM |
| BODY HEIGHT | 0.185 INCHES MAXIMUM |
| BODY WIDTH | 0.545 INCHES MAXIMUM |
| MAXIMUM POWER DISSIPATION RATING | 525.0 MILLIWATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | MONOLITHIC AND ULTRAVIOLET ERASABLE AND STATIC OPERATION |