NSN 5962-01-285-4729
Part Details | DIGITAL MICROCIRCUIT
5962-01-285-4729 A microcircuit specifically designed to generate, modify, or process electrical signals which operate with two distinct or binary states. These states are commonly referred to as on and off, true and false, high and low, or "1" and "0".
Alternate Parts: 4772166001, 477-2166-001, 54LS00L1MQB, 155131522, 15-513152-2, M3851030001B2X, M38510/30001B2X, M3851030001B2B, M38510/30001B2B, M3851030001B2A, M38510/30001B2A, MILM38510300, MIL-M-38510/300, G101404852, G101404-852, 59623830001B2X, 5962-3830001B2X, 59623830001B2B, 5962-3830001B2B, 59623830001B2A, 5962-3830001B2A, H123291A, DM54LS00E883C, DM54LS00E/883C, G101404852, G101404-852, G101404821, G101404-821, SN54LS00FK, SNJ54LS00FK, 5962-01-285-4729, 01-285-4729, 5962012854729, 012854729
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 14, 1988 | 01-285-4729 | 31779 ( MICROCIRCUIT, DIGITAL ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-285-4729
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 477-2166-001 | 94756 | BOEING COMPANY, THEDBA BOEING |
| 54LS00L1MQB | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 15-513152-2 | 04655 | GENERAL DYNAMICS MISSION SYSTEMS,INC. |
| M38510/30001B2X | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| M38510/30001B2B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| M38510/30001B2A | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-M-38510/300 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| G101404-852 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 5962-3830001B2X | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 5962-3830001B2B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 5962-3830001B2A | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| H123291A | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| DM54LS00E/883C | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| G101404-852 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G101404-821 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| SN54LS00FK | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| SNJ54LS00FK | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5962-01-285-4729
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| DESIGN FUNCTION AND QUANTITY | 4 GATE, NAND |
| INPUT CIRCUIT PATTERN | QUAD 2 INPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACVM0.5 VOLTS MINIMUM AND ACV7.0 VOLTS MAXIMUM |
| TIME RATING PER CHACTERISTIC | NSCAEE20.00 NANOSECONDS AND NSCAED24.00 NANOSECONDS |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 20 LEADLESS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| INCLOSURE MATERIAL | CERAMIC |
| CASE OUTLINE SOURCE AND DESIGNATOR | C-2 MIL-M-38510 |
| BODY LENGTH | 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM |
| BODY HEIGHT | 0.064 INCHES MINIMUM AND 0.100 INCHES MAXIMUM |
| BODY WIDTH | 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM |
| MAXIMUM POWER DISSIPATION RATING | 6.1 MILLIWATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | LOW POWER AND SCHOTTKY AND MONOLITHIC |
| TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510 TO 300 GOVERNMENT SPECIFICATION |