NSN 5962-01-318-9303
Part Details | DIGITAL MICROCIRCUIT
5962-01-318-9303 A microcircuit specifically designed to generate, modify, or process electrical signals which operate with two distinct or binary states. These states are commonly referred to as on and off, true and false, high and low, or "1" and "0".
Alternate Parts: 335152002, 335152-002, ROMPROM, ROM/PROM, 5962-01-318-9303, 01-318-9303, 5962013189303, 013189303
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 27, 1990 | 01-318-9303 | 31779 ( MICROCIRCUIT, DIGITAL ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-318-9303
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 335152-002 | 81413 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
| ROM/PROM | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
Technical Data | NSN 5962-01-318-9303
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| INPUT CIRCUIT PATTERN | 8 INPUT |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | SILICON |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| MAXIMUM POWER DISSIPATION RATING | 400.0 MILLIWATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | BIPOLAR AND PROGRAMMED AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND ULTRAVIOLET ERASABLE AND BURN IN AND LOW POWER AND HIGH SPEED |
| SPECIAL FEATURES | ESD |
| CRITICALITY CODE JUSTIFICATION | FEAT |