NSN 5962-01-319-6513
Part Details | DIGITAL MICROCIRCUIT
5962-01-319-6513 A microcircuit specifically designed to generate, modify, or process electrical signals which operate with two distinct or binary states. These states are commonly referred to as on and off, true and false, high and low, or "1" and "0".
Alternate Parts: IDT75681L55EBRT, G3172762, G317276-2, G3172762, G317276-2, 5962-01-319-6513, 01-319-6513, 5962013196513, 013196513
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 11, 1990 | 01-319-6513 | 31779 ( MICROCIRCUIT, DIGITAL ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-319-6513
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| IDT75681L55EBRT | 61772 | INTEGRATED DEVICE TECHNOLOGY INC |
| G317276-2 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G317276-2 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5962-01-319-6513
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| INPUT CIRCUIT PATTERN | 1 INPUT |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| INCLOSURE CONFIGURATION | FLAT PACK |
| INCLOSURE MATERIAL | CERAMIC |
| CASE OUTLINE SOURCE AND DESIGNATOR | F-6 MIL-M-38510 |
| MAXIMUM POWER DISSIPATION RATING | 1.0 MILLIWATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | PROGRAMMABLE AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION |
| SPECIAL FEATURES | ESD |
| CRITICALITY CODE JUSTIFICATION | FEAT |
| END ITEM IDENTIFICATION | MILSTAR |