NSN 5962-01-355-3768
Part Details | MEMORY MICROCIRCUIT
5962-01-355-3768 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: 28C25620DM883, 28C256-20DM/883, 59628852504XX, 5962-8852504XX, 59628852504XB, 5962-8852504XB, 59628852504XA, 5962-8852504XA, 596288525, 5962-88525, ROMPROM HEAD 269, ROM/PROM HEAD 269, 42799505, 42-799505, PL714559801, PL7145598-01, 6510515, 10133797, G4901191, G490119-1, DM28C256200B, DM28C256-200/B, X28C256DMB20, X28C256DMB-20, 5962-01-355-3768, 01-355-3768, 5962013553768, 013553768
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 15, 1992 | 01-355-3768 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-355-3768
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 28C256-20DM/883 | 1FN41 | ATMEL CORPORATION |
| 5962-8852504XX | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8852504XB | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8852504XA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-88525 | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| ROM/PROM HEAD 269 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 42-799505 | 81982 | HYDRO-AIRE, INC. |
| PL7145598-01 | 90536 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| 6510515 | 53711 | NAVAL SEA SYSTEMS COMMAND |
| 10133797 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
| G490119-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| DM28C256-200/B | 61394 | SEEQ TECHNOLOGY INC |
| X28C256DMB-20 | 60395 | XICOR INC |
Technical Data | NSN 5962-01-355-3768
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| INPUT CIRCUIT PATTERN | 23 INPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACVM0.3 VOLTS MINIMUM AND ACV6.25 VOLTS MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | HK80.00 MILLIAMPERES NOMINAL |
| TIME RATING PER CHACTERISTIC | NSCADR200.00 NANOSECONDS |
| MEMORY DEVICE TYPE | EEPROM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| BODY LENGTH | 1.490 INCHES MAXIMUM |
| BODY HEIGHT | 0.210 INCHES MAXIMUM |
| BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED AND BIPOLAR |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |