NSN 5962-01-356-9160
Part Details | MEMORY MICROCIRCUIT
5962-01-356-9160 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: IDT6116LA55TDBRT, G3191331, G319133-1, G3191331, G319133-1, 5962-01-356-9160, 01-356-9160, 5962013569160, 013569160
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 14, 1992 | 01-356-9160 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-356-9160
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| IDT6116LA55TDBRT | 61772 | INTEGRATED DEVICE TECHNOLOGY INC |
| G319133-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G319133-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5962-01-356-9160
| Characteristic | Specifications |
|---|---|
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ADNM0.5 VOLTS MINIMUM AND ADN7.0 VOLTS MAXIMUM |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,DIGITAL-2K X 8 BITS,STATIC RAM |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND RADIATION HARDENED AND STATIC OPERATION AND TESTED TO MIL-STD-883 |
| SPECIAL FEATURES | RADIATION HARDNED IAW ESD-82-TE-1390B;ESD;HCI |
| CRITICALITY CODE JUSTIFICATION | AFEAT$$ACBBL$$ANHCF |
| NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| END ITEM IDENTIFICATION | MILSTAR |