NSN 5962-01-357-1983
Part Details | DIGITAL MICROCIRCUIT
5962-01-357-1983 A microcircuit specifically designed to generate, modify, or process electrical signals which operate with two distinct or binary states. These states are commonly referred to as on and off, true and false, high and low, or "1" and "0".
Alternate Parts: AM25S10BFX, AM25S10/BFX, 9R0176, 59628671801FA, 5962-8671801FA, 596286718, 5962-86718, G2935192, G293519-2, G2935192, G293519-2, G293519, 5962-01-357-1983, 01-357-1983, 5962013571983, 013571983
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 18, 1992 | 01-357-1983 | 31779 ( MICROCIRCUIT, DIGITAL ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-357-1983
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| AM25S10/BFX | 34335 | ADVANCED MICRO DEVICES, INC.DBA A M D |
| 9R0176 | 0EU86 | AUSTIN SEMICONDUCTOR INCDBA MICROSS COMPONENTS |
| 5962-8671801FA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-86718 | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| G293519-2 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G293519-2 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| G293519 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5962-01-357-1983
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| DESIGN FUNCTION AND QUANTITY | 1 SHIFTER |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACV0.5 VOLTS MINIMUM AND ACV7.0 VOLTS MAXIMUM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 16 FLAT LEADS |
| INCLOSURE CONFIGURATION | FLAT PACK |
| SPECIAL FEATURES | RADIATION HARDENED IAW ESD-82-TE-1390B;ESD;HCI;SH |
| CRITICALITY CODE JUSTIFICATION | FEAT |
| END ITEM IDENTIFICATION | MILSTAR |