NSN 5962-01-359-0333
Part Details | MEMORY MICROCIRCUIT
5962-01-359-0333 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: 330517001, 330517-001, CY7C161A45DMB, CY7C161A-45DMB, CY7C161A25DBM, CY7C161A-25DBM, P4C198125DMB, P4C1981-25DMB, P4C198125CMB M0296, P4C1981-25CMB M0296, 5962-01-359-0333, 01-359-0333, 5962013590333, 013590333
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 27, 1992 | 01-359-0333 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-359-0333
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 330517-001 | 81413 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
| CY7C161A-45DMB | 65786 | CYPRESS SEMICONDUCTOR CORPORATIONDBA CYPRESS |
| CY7C161A-25DBM | 65786 | CYPRESS SEMICONDUCTOR CORPORATIONDBA CYPRESS |
| P4C1981-25DMB | 0K894 | PERFORMANCE SEMICONDUCTOR CORP |
| P4C1981-25CMB M0296 | 3DTT2 | PYRAMID SEMICONDUCTOR CORP |
Technical Data | NSN 5962-01-359-0333
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| INPUT CIRCUIT PATTERN | 21 INPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACVM0.5 VOLTS MINIMUM AND ACV7.0 VOLTS MAXIMUM |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| MAXIMUM POWER DISSIPATION RATING | 385.0 MILLIWATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND BIDIRECTIONAL AND PROGRAMMED AND MONOLITHIC |