NSN 5962-01-359-3786
Part Details | MEMORY MICROCIRCUIT
5962-01-359-3786 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: G371436102, G371436-102, G371436102, G371436-102, G371436102, G371436-102, G371436, 5962-01-359-3786, 01-359-3786, 5962013593786, 013593786
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 04, 1992 | 01-359-3786 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-359-3786
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| G371436-102 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| G371436-102 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G371436-102 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| G371436 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5962-01-359-3786
| Characteristic | Specifications |
|---|---|
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ABC7.0 VOLTS MAXIMUM |
| MEMORY DEVICE TYPE | PROM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 24 FLAT LEADS |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | PROGRAMMABLE READ ONLY MEMORY |
| HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| SPECIAL FEATURES | RADIATION HARDNED IAW ESD-82-TE-1390B;ESD;HCI |
| CRITICALITY CODE JUSTIFICATION | FEAT |
| END ITEM IDENTIFICATION | MILSTAR |