NSN 5962-01-359-7667
Part Details | MEMORY MICROCIRCUIT
5962-01-359-7667 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: CY7C42050DMB, CY7C420-50DMB, 59628986303YX, 5962-8986303YX, 59628986303XX, 5962-8986303XX, 59628986303XX, 5962-8986303XX, 59628986303XB, 5962-8986303XB, 59628986303XA, 5962-8986303XA, 596289863, 5962-89863, IDT7201SA50DB, 10133978, 5962-01-359-7667, 01-359-7667, 5962013597667, 013597667
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 11, 1992 | 01-359-7667 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-359-7667
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| CY7C420-50DMB | 65786 | CYPRESS SEMICONDUCTOR CORPORATIONDBA CYPRESS |
| 5962-8986303YX | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8986303XX | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8986303XX | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8986303XB | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8986303XA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-89863 | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| IDT7201SA50DB | 61772 | INTEGRATED DEVICE TECHNOLOGY INC |
| 10133978 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
Technical Data | NSN 5962-01-359-7667
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACVM0.5 VOLTS MINIMUM AND ACV7.0 VOLTS MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACHG130.00 MILLIAMPERES NOMINAL |
| CAPITANCE RATING PER CHARACTERISTIC | BPFC8.00 INPUT AND FPFC8.00 OUTPUT |
| TIME RATING PER CHACTERISTIC | NSCADR50.00 NANOSECONDS |
| MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | PARALLEL 512 X 9 FIFO |
| BODY LENGTH | 1.490 INCHES MAXIMUM |
| BODY HEIGHT | 0.217 INCHES MAXIMUM |
| BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |