NSN 5962-01-360-1357
Part Details | MEMORY MICROCIRCUIT
5962-01-360-1357 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: IDT6167LA70DBRT, G3092861, G309286-1, G309286, G3092861, G309286-1, 5962-01-360-1357, 01-360-1357, 5962013601357, 013601357
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 18, 1992 | 01-360-1357 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-360-1357
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| IDT6167LA70DBRT | 61772 | INTEGRATED DEVICE TECHNOLOGY INC |
| G309286-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| G309286 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G309286-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5962-01-360-1357
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ADN5.5 VOLTS MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACHG60.00 MILLIAMPERES NOMINAL |
| TIME RATING PER CHACTERISTIC | NSCADR70.00 NANOSECONDS |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| INCLOSURE CONFIGURATION | FLAT PACK |
| CASE OUTLINE SOURCE AND DESIGNATOR | F-9 MIL-M-38510 |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RANDOM ACCESS MEMORY |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| SPECIAL FEATURES | RADIATION HARDNED IAW ESD-82-TE-1390B;ESD;HCI; |
| CRITICALITY CODE JUSTIFICATION | FEAT |
| END ITEM IDENTIFICATION | MILSTAR |