NSN 5962-01-363-6480
Part Details | MEMORY MICROCIRCUIT
5962-01-363-6480 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: G494565255, G494565-255, G494565255, G494565-255, G494565255, G494565-255, 5962-01-363-6480, 01-363-6480, 5962013636480, 013636480
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 02, 1992 | 01-363-6480 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-363-6480
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| G494565-255 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| G494565-255 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G494565-255 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5962-01-363-6480
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACV7.0 VOLTS MAXIMUM |
| MEMORY DEVICE TYPE | EEPROM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 28 BEAM LEAD |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MCKT,DIGITAL,MEMORY,NMOS,EEPROM,32K X 8 |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | HERMETICALLY SEALED AND RADIATION HARDENED |
| SPECIAL FEATURES | ESD;HCI. SELECTED FROM P/N 49956 G431118-1. MFG 60395 X28256DMB-25 |
| CRITICALITY CODE JUSTIFICATION | FEAT |
| END ITEM IDENTIFICATION | MILSTAR |