NSN 5962-01-373-5795

Part Details | MEMORY MICROCIRCUIT

5962-01-373-5795 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.

Alternate Parts: PLDC20RA1035DMB, PLDC20RA10-35DMB, 59629055501LX, 5962-9055501LX, 59629055501LB, 5962-9055501LB, 59629055501LA, 5962-9055501LA, 596290555, 5962-90555, ROMPROM HEAD 276, ROM/PROM HEAD 276, ROMPROM, ROM/PROM, G4352954, G435295-4, 5962-01-373-5795, 01-373-5795, 5962013735795, 013735795

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59APR 07, 199301-373-579541015 ( MICROCIRCUIT, MEMORY )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-373-5795
Part Number Cage Code Manufacturer
PLDC20RA10-35DMB65786CYPRESS SEMICONDUCTOR CORPORATIONDBA CYPRESS
5962-9055501LX67268DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
5962-9055501LB67268DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
5962-9055501LA67268DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
5962-9055567268DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
ROM/PROM HEAD 27616236DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
ROM/PROM16236DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
G435295-449956RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5962-01-373-5795
Characteristic Specifications
OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
INPUT CIRCUIT PATTERN 20 INPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTICAAHM0.5 VOLTS MINIMUM AND AAH7.0 VOLTS MAXIMUM
CURRENT RATING PER CHARACTERISTICBACGXM16.00 MILLIAMPERES NOMINAL
TIME RATING PER CHACTERISTICNSAADR35.00 NANOSECONDS
MEMORY DEVICE TYPE PAL
OPERATING TEMP RANGE-55.0 TO +125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT
TERMINAL SURFACE TREATMENT SOLDER
INCLOSURE CONFIGURATION DUAL-IN-LINE
INCLOSURE MATERIAL CERAMIC
CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510
PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUIT,MEMORY,DIGITAL,CMOS,ONE TIME PROGRAMMABLE,ASYNCHRONOUS,PALD,MONOLITHIC SILICON
HYBRID TECHNOLOGY TYPE MONOLITHIC
MAXIMUM POWER DISSIPATION RATING1.0 WATTS
STORAGE TEMP RANGE-65.0 TO +150.0 DEG CELSIUS
FEATURES PROVIDED ASYNCHRONOUS AND MONOLITHIC AND PROGRAMMABLE
SPECIAL FEATURESONE TIME ASYNCHRONOUS PROGRAMMABLE
TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). AND 96906-MIL-STD-480 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). AND 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). AND 96906-MIL-STD-1835J STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
SPECIFICATION/STANDARD DATA67268-5962-90555 GOVERNMENT STANDARD
NONDEFINITIVE SPEC/STD DATA01 TYPE AND L CASE AND A FINISH
END ITEM IDENTIFICATIONF16AIRCOMBFIT E/I FSCM 81755