NSN 5962-01-373-9120
Part Details | MEMORY MICROCIRCUIT
5962-01-373-9120 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: MMI6301J, MMI6301-J, ROMPROM, ROM/PROM, DM54S287J883, DM54S287J/883, 979738114, 979738-114, 979738114, 979738-114, 979738114, 979738-114, PR979738114, PR979738-114, PR979738114, PR979738-114, 5962-01-373-9120, 01-373-9120, 5962013739120, 013739120
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 13, 1993 | 01-373-9120 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-373-9120
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MMI6301-J | 34335 | ADVANCED MICRO DEVICES, INC.DBA A M D |
| ROM/PROM | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| DM54S287J/883 | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| 979738-114 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 979738-114 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 979738-114 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| PR979738-114 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| PR979738-114 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5962-01-373-9120
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | AAHM0.5 VOLTS MINIMUM AND AAH7.0 VOLTS MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACGX100.00 MILLIAMPERES NOMINAL |
| MEMORY DEVICE TYPE | EEPROM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | 1024-BIT BIPOLAR(256X4) ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
| HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | BIPOLAR AND ELECTRICALLY ALTERABLE AND LOW POWER AND PROGRAMMED AND HIGH RELIABILITY |
| END ITEM IDENTIFICATION | DISPLAY CONSO E/I FSCM 49956 |
| PURCHASE DESCRIPTION IDENTIFICATION | 49956-979738-114 |