NSN 5962-01-373-9122
Part Details | MEMORY MICROCIRCUIT
5962-01-373-9122 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: 8200801JA, ROMPROM, ROM/PROM, M3851021101BJA, M38510/21101BJA, PRG39574810, PRG395748-10, PRG39574810, PRG395748-10, G39574810, G395748-10, G39574810, G395748-10, G39574810, G395748-10, 5962-01-373-9122, 01-373-9122, 5962013739122, 013739122
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 13, 1993 | 01-373-9122 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-373-9122
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 8200801JA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| ROM/PROM | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| M38510/21101BJA | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| PRG395748-10 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| PRG395748-10 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| G395748-10 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| G395748-10 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G395748-10 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5962-01-373-9122
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | AAHM0.3 VOLTS MINIMUM AND AAH7.0 VOLTS MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACHA100.00 MILLIAMPERES NOMINAL |
| TIME RATING PER CHACTERISTIC | NSAADR95.00 NANOSECONDS |
| MEMORY DEVICE TYPE | PROM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,MEMORY,DIGITAL,SCHOTTKY BIPOLAR 32K PROM,MONOLITHIC SILICON |
| HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| MAXIMUM POWER DISSIPATION RATING | 1.04 WATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND SCHOTTKY AND PROGRAMMED AND BIPOLAR |
| TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). AND 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| SPECIFICATION/STANDARD DATA | 67268-8200801JA GOVERNMENT STANDARD |
| DEPARTURE FROM CITED DESIGNATOR | ALTERED BY PROGAMMING & MARKING |
| END ITEM IDENTIFICATION | SUB HPA E/I FSCM 49956 |
| PURCHASE DESCRIPTION IDENTIFICATION | 49956-G395748-10 |