NSN 5962-01-382-4918
Part Details | MEMORY MICROCIRCUIT
5962-01-382-4918 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: ROMPROM, ROM/PROM, DM54S475AJ, 979734104, 979734-104, 979734104, 979734-104, 979734104, 979734-104, 54S475J883, 54S475J/883, 5962-01-382-4918, 01-382-4918, 5962013824918, 013824918
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 03, 1993 | 01-382-4918 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-382-4918
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| ROM/PROM | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| DM54S475AJ | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| 979734-104 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 979734-104 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 979734-104 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 54S475J/883 | 3V146 | ROCHESTER ELECTRONICS, LLC |
Technical Data | NSN 5962-01-382-4918
| Characteristic | Specifications |
|---|---|
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | AAFM1.2 VOLTS MINIMUM AND AAF5.5 VOLTS MAXIMUM AND AAGM0.5 VOLTS MINIMUM AND AAG5.5 VOLTS MAXIMUM |
| MEMORY DEVICE TYPE | PROM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | BIPOLAR AND SCHOTTKY AND LOW VOLTAGE AND HIGH IMPEDANCE AND PROGRAMMED AND W/OPEN COLLECTOR AND TESTED TO MIL-STD-883 |
| END ITEM IDENTIFICATION | DISPLAY CONSO E/I FSCM 49956 |