NSN 5962-01-389-7093
Part Details | MEMORY MICROCIRCUIT
5962-01-389-7093 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: 82008B1JA, ROMPROM, ROM/PROM, 82008F1JA, 8200801JA, 82008A1JA, G258801107, G258801-107, G258801107, G258801-107, G258801107, G258801-107, 5962-01-389-7093, 01-389-7093, 5962013897093, 013897093
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 29, 1994 | 01-389-7093 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-389-7093
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 82008B1JA | 34335 | ADVANCED MICRO DEVICES, INC.DBA A M D |
| ROM/PROM | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 82008F1JA | 07933 | FAIRCHILD SEMICONDUCTOR CORPSEMICONDUCTOR DIV HQ |
| 8200801JA | 34371 | INTERSIL CORPORATIONDIV NA |
| 82008A1JA | 34371 | INTERSIL CORPORATIONDIV NA |
| G258801-107 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| G258801-107 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G258801-107 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5962-01-389-7093
| Characteristic | Specifications |
|---|---|
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | AAF5.5 VOLTS MAXIMUM |
| TIME RATING PER CHACTERISTIC | NSAADR95.00 NANOSECONDS |
| MEMORY DEVICE TYPE | PROM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | 32K PROM |
| HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| FEATURES PROVIDED | BIPOLAR AND PROGRAMMED AND SCHOTTKY |
| END ITEM IDENTIFICATION | USED ON: AN/ALQ-119A |