NSN 5962-01-389-8835
Part Details | MEMORY MICROCIRCUIT
5962-01-389-8835 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: CY7C186A45DMB, CY7C186A-45DMB, 596238294, 5962-38294, 59628552506XX, 5962-8552506XX, 59628552506XX, 5962-8552506XX, 59628552506XA, 5962-8552506XA, 59623829411MXX, 5962-3829411MXX, 59623829411MXB, 5962-3829411MXB, 59623829411MXA, 5962-3829411MXA, 6264C45BXAJC, 6264C-45/BXAJC, HM6264ALP15, HM6264ALP-15, IDT7164S45DB, L7C185HMBIMB45, L7C185HMB/IMB45, HM165764M883, HM1-65764M/883, HM1E65764MMB, HM1E-65764MMB, P4C16445DWMB, P4C164-45DWMB, 5962-01-389-8835, 01-389-8835, 5962013898835, 013898835
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 05, 1994 | 01-389-8835 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-389-8835
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| CY7C186A-45DMB | 65786 | CYPRESS SEMICONDUCTOR CORPORATIONDBA CYPRESS |
| 5962-38294 | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8552506XX | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8552506XX | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8552506XA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-3829411MXX | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-3829411MXB | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-3829411MXA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 6264C-45/BXAJC | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| HM6264ALP-15 | 62786 | HITACHI AMERICA, LTD. |
| IDT7164S45DB | 61772 | INTEGRATED DEVICE TECHNOLOGY INC |
| L7C185HMB/IMB45 | 65896 | LOGIC DEVICES INCORPORATED |
| HM1-65764M/883 | 0HGZ7 | MATRA-HARRIS SEMICONDUCTOR |
| HM1E-65764MMB | 0HG27 | MCHALE GREG |
| P4C164-45DWMB | 75569 | PERFORMANCE SEMICONDUCTOR CORP |
Technical Data | NSN 5962-01-389-8835
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| INPUT CIRCUIT PATTERN | 25 INPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACVM0.5 VOLTS MINIMUM AND ACV7.0 VOLTS MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACHG125.00 MILLIAMPERES NOMINAL |
| TIME RATING PER CHACTERISTIC | NSCADR45.00 NANOSECONDS |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| BODY LENGTH | 1.490 INCHES MAXIMUM |
| BODY HEIGHT | 0.232 INCHES MAXIMUM |
| BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND BIDIRECTIONAL AND HIGH IMPEDANCE |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |