NSN 5962-01-406-2375
Part Details | MEMORY MICROCIRCUIT
5962-01-406-2375 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: CY7C19955DMB, CY7C199-55DMB, 59628866203NX, 5962-8866203NX, 59628866203NC, 5962-8866203NC, 59628866203NB, 5962-8866203NB, 59628866203NA, 5962-8866203NA, 596288662, 5962-88662, IDT71256S55TCB, L7C199DMB55, MT5C2568C55883C, MT5C2568C-55883C, M3851029307BYX, M38510/29307BYX, M3851029307BYB, M38510/29307BYB, M3851029307BYA, M38510/29307BYA, MILM38510293, MIL-M-38510/293, PDM41256S55DB, G492096233, G492096-233, G492096233, G492096-233, EDI8834C55QB, 5962-01-406-2375, 01-406-2375, 5962014062375, 014062375
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 24, 1994 | 01-406-2375 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-406-2375
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| CY7C199-55DMB | 65786 | CYPRESS SEMICONDUCTOR CORPORATIONDBA CYPRESS |
| 5962-8866203NX | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8866203NC | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8866203NB | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8866203NA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-88662 | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| IDT71256S55TCB | 61772 | INTEGRATED DEVICE TECHNOLOGY INC |
| L7C199DMB55 | 65896 | LOGIC DEVICES INCORPORATED |
| MT5C2568C-55883C | 6Y440 | MICRON TECHNOLOGY, INC. |
| M38510/29307BYX | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| M38510/29307BYB | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| M38510/29307BYA | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-M-38510/293 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| PDM41256S55DB | 0K6N4 | PARADIGM TECHNOLOGY INC |
| G492096-233 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G492096-233 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| EDI8834C55QB | 66301 | WHITE ELECTRONIC DESIGNS CORPDIV COMMERCIAL DIVISION |
Technical Data | NSN 5962-01-406-2375
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACV0.5 VOLTS MINIMUM AND ACV7.0 VOLTS MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACGM105.00 MILLIAMPERES NOMINAL |
| CAPITANCE RATING PER CHARACTERISTIC | BPFC11.00 INPUT |
| TIME RATING PER CHACTERISTIC | NSCADR55.00 NANOSECONDS |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| BODY LENGTH | 1.485 INCHES MAXIMUM |
| BODY HEIGHT | 0.210 INCHES MAXIMUM |
| BODY WIDTH | 0.240 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |