NSN 5962-01-408-2869

Part Details | MEMORY MICROCIRCUIT

5962-01-408-2869 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.

Alternate Parts: HM628128LP7, HM628128LP-7, UPD431000ACZ70L, UPD431000ACZ-70L, PD431000ACZ70L, PD431000ACZ-70L, K6T1008C2EDB7000, 5962-01-408-2869, 01-408-2869, 5962014082869, 014082869

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59FEB 14, 199501-408-286941015 ( MICROCIRCUIT, MEMORY )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-408-2869
Part Number Cage Code Manufacturer
HM628128LP-762786HITACHI AMERICA, LTD.
UPD431000ACZ-70L33297NEC ELECTRONICS USA INCELECTRONIC ARRAYS DIV
PD431000ACZ-70L33297NEC ELECTRONICS USA INCELECTRONIC ARRAYS DIV
K6T1008C2EDB70000DUN9SAMSUNG SEMICONDUCTOR, INC.DBA SAMSUNG
Technical Data | NSN 5962-01-408-2869
Characteristic Specifications
INPUT CIRCUIT PATTERN 8 INPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTICACV4.5 VOLTS MINIMUM AND ACV5.5 VOLTS MAXIMUM
MEMORY DEVICE TYPE RAM
OPERATING TEMP RANGE+0.0 TO +70.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY32 FLAT LEADS
INCLOSURE CONFIGURATION DUAL-IN-LINE
INCLOSURE MATERIAL PLASTIC
PART NAME ASSIGNED BY CONTROLLING AGENCYCMOS STATIC RAM
MAXIMUM POWER DISSIPATION RATING1.0 WATTS
STORAGE TEMP RANGE-55.0 TO +125.0 DEG CELSIUS
FEATURES PROVIDED 3-STATE OUTPUT
SPECIAL FEATURES128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY
END ITEM IDENTIFICATIONREMOTE TERMINAL UNIT, WLB-RTU (1 TO 10)