NSN 5962-01-414-2212
Part Details | MEMORY MICROCIRCUIT
5962-01-414-2212 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: 59628863404YA, 5962-8863404YA, 5962-01-414-2212, 01-414-2212, 5962014142212, 014142212
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 02, 1995 | 01-414-2212 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-414-2212
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 5962-8863404YA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
Technical Data | NSN 5962-01-414-2212
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ADNM0.3 VOLTS MINIMUM AND ADN6.3 VOLTS MAXIMUM |
| TIME RATING PER CHACTERISTIC | NSAADR90.00 NANOSECONDS |
| MEMORY DEVICE TYPE | EEPROM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 32 LEADLESS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| INCLOSURE MATERIAL | SILICON |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUITS, MEMORY, DIGITAL, CMOS 32K X 8 EEPROM, MONOLITHIC SILICON |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC |
| SPECIAL FEATURES | CASE DESIGNATOR PER MIL-STD1835 CQCC1-N32; 3 MS WRITE SPEED, BYTE/PAGE DATA POLLING/TOGGLE BIT END OF WRITE INDICATOR, 10,000 CYCLES ENDURANCE |
| TEST DATA DOCUMENT | 96906-MIL-STD883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CRITICALITY CODE JUSTIFICATION | CBBL |
| END ITEM IDENTIFICATION | F-16 ACFT |