NSN 5962-01-415-1213

Part Details | MEMORY MICROCIRCUIT

5962-01-415-1213 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.

Alternate Parts: 71B229S16LB, 31293310003, 3129331-0003, 5962-01-415-1213, 01-415-1213, 5962014151213, 014151213

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUN 20, 199501-415-121341015 ( MICROCIRCUIT, MEMORY )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-415-1213
Part Number Cage Code Manufacturer
71B229S16LB61772INTEGRATED DEVICE TECHNOLOGY INC
3129331-000396214RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5962-01-415-1213
Characteristic Specifications
OUTPUT LOGIC FORM BIPOLAR METAL-OXIDE SEMICONDUCTOR
VOLTAGE RATING AND TYPE PER CHARACTERISTICADN4.5 VOLTS MINIMUM AND ADN5.5 VOLTS MAXIMUM
MEMORY DEVICE TYPE RAM
OPERATING TEMP RANGE-55.0 TO +125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY32 PRINTED CIRCUIT
TERMINAL SURFACE TREATMENT SOLDER
INCLOSURE CONFIGURATION DUAL-IN-LINE
PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUIT, DIGITAL, MEMORY, CACHE RAM, 16K X 9 X 2
BODY LENGTH0.817 INCHES MINIMUM AND 0.833 INCHES MAXIMUM
BODY HEIGHT0.080 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY WIDTH0.395 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
MAXIMUM POWER DISSIPATION RATING1.0 WATTS
STORAGE TEMP RANGE-65.0 TO +150.0 DEG CELSIUS
FEATURES PROVIDED ELECTROSTATIC SENSITIVE
SPECIAL FEATURESBICAMERAL (2 BANK) CACHE RAM SPECIFICALLY DESIGNED TO SUPPORT SPLIT INSTRUCTION & DATA CACHES OF R3000 TYPE MICROPROCESSORS
TEST DATA DOCUMENT96906-MIL-STD883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
CRITICALITY CODE JUSTIFICATIONCBBL
END ITEM IDENTIFICATIONF-16 MODULAR MISSION COMPUTER CORE CLUSTER