NSN 5962-01-432-8567
Part Details | MEMORY MICROCIRCUIT
5962-01-432-8567 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: ROMPROM, ROM/PROM, 31195373, 3119537-3, 5962-01-432-8567, 01-432-8567, 5962014328567, 014328567
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 17, 1996 | 01-432-8567 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-432-8567
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| ROM/PROM | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 3119537-3 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5962-01-432-8567
| Characteristic | Specifications |
|---|---|
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ABCM0.3 VOLTS MINIMUM AND ABC6.25 VOLTS MAXIMUM |
| TIME RATING PER CHACTERISTIC | NSAADR120.00 NANOSECONDS |
| MEMORY DEVICE TYPE | EEPROM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 32 LEADLESS |
| INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| INCLOSURE MATERIAL | CERAMIC |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | PROGRAMMED AND ELECTROSTATIC SENSITIVE AND BURN IN |
| SPECIAL FEATURES | MADE FROM SMD 5962-8863402YA |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| END ITEM IDENTIFICATION | C10661B/AAS38 E/I FSCM 09205 |