NSN 5962-01-436-7793
Part Details | MEMORY MICROCIRCUIT
5962-01-436-7793 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: 59628984101LA, 5962-8984101LA, ROMPROM, ROM/PROM, NHG2914732, NHG291473-2, G5927322, G592732-2, G5927322, G592732-2, G2914732, G291473-2, G2914732, G291473-2, G2914732, G291473-2, 5962-01-436-7793, 01-436-7793, 5962014367793, 014367793
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 27, 1996 | 01-436-7793 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-436-7793
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 5962-8984101LA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| ROM/PROM | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| NHG291473-2 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| G592732-2 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G592732-2 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| G291473-2 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| G291473-2 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G291473-2 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5962-01-436-7793
| Characteristic | Specifications |
|---|---|
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ACV5.0 VOLTS NOMINAL |
| TIME RATING PER CHACTERISTIC | NSCADW30.00 NANOSECONDS |
| MEMORY DEVICE TYPE | PAL |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| FEATURES PROVIDED | PROGRAMMED |
| SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL PROCESS |
| CRITICALITY CODE JUSTIFICATION | FEAT |
| END ITEM IDENTIFICATION | CP-1870 (V) 2/U |