NSN 5962-01-444-3950
Part Details | MEMORY MICROCIRCUIT
5962-01-444-3950 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: MT5C1009CW70L883C, MT5C1009CW-70L883C, 59628959808MXX, 5962-8959808MXX, 59628959808MXB, 5962-8959808MXB, 59628959808MXA, 5962-8959808MXA, 596289598, 5962-89598, ROMPROM, ROM/PROM, 5962-01-444-3950, 01-444-3950, 5962014443950, 014443950
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 06, 1997 | 01-444-3950 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-444-3950
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MT5C1009CW-70L883C | 0EU86 | AUSTIN SEMICONDUCTOR INCDBA MICROSS COMPONENTS |
| 5962-8959808MXX | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8959808MXB | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8959808MXA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-89598 | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| ROM/PROM | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
Technical Data | NSN 5962-01-444-3950
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ABCM0.5 VOLTS MINIMUM AND ABC7.0 VOLTS MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | HG110.00 MILLIAMPERES NOMINAL |
| TIME RATING PER CHACTERISTIC | NSAADR70.00 NANOSECONDS |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 32 PIN |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC AND GLASS |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8 STATIC RANDOM ACCESS MEMORY (SRAM) LOW POWER, MONOLITHIC SILICON |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | MONOLITHIC AND ELECTROSTATIC SENSITIVE AND LOW POWER |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |