NSN 5962-01-445-0693
Part Details | MEMORY MICROCIRCUIT
5962-01-445-0693 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: CY7C12310DMB, CY7C123-10DMB, 8512132424, 8512132-424, 5962-01-445-0693, 01-445-0693, 5962014450693, 014450693
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 22, 1997 | 01-445-0693 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-445-0693
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| CY7C123-10DMB | 65786 | CYPRESS SEMICONDUCTOR CORPORATIONDBA CYPRESS |
| 8512132-424 | 07187 | HONEYWELL INTERNATIONAL INC.DBA HONEYWELL |
Technical Data | NSN 5962-01-445-0693
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ADNM0.5 VOLTS MINIMUM AND ADN7.0 VOLTS MAXIMUM |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,DIGITAL CMOS SRAM |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND STATIC OPERATION |
| CRITICALITY CODE JUSTIFICATION | CBBL |
| END ITEM IDENTIFICATION | F-15I |