NSN 5962-01-445-1323
Part Details | MEMORY MICROCIRCUIT
5962-01-445-1323 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: CY7B18515DMB, CY7B185-15DMB, 5962-01-445-1323, 01-445-1323, 5962014451323, 014451323
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 23, 1997 | 01-445-1323 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-445-1323
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| CY7B185-15DMB | 65786 | CYPRESS SEMICONDUCTOR CORPORATIONDBA CYPRESS |
Technical Data | NSN 5962-01-445-1323
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR AND TRANSISTOR-TRANSISTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ABC5.0 VOLTS NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | CKAHU145.00 MICROAMPERES |
| MEMORY DEVICE TYPE | RAM |
| WORD QUANTITY | 16000 |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 28 PIN |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | X8 SRAM |
| FEATURES PROVIDED | W/COMMON MODE AND 3-STATE OUTPUT AND PARALLEL OPERATION |