NSN 5962-01-449-6836
Part Details | MEMORY MICROCIRCUIT
5962-01-449-6836 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: MT5C1009EC70L883C, MT5C1009EC-70L883C, 59628959808MUX, 5962-8959808MUX, 59628959808MUB, 5962-8959808MUB, 59628959808MUA, 5962-8959808MUA, 596289598, 5962-89598, EDI88128LPS70LB, 5962-01-449-6836, 01-449-6836, 5962014496836, 014496836
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 09, 1997 | 01-449-6836 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-449-6836
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MT5C1009EC-70L883C | 0EU86 | AUSTIN SEMICONDUCTOR INCDBA MICROSS COMPONENTS |
| 5962-8959808MUX | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8959808MUB | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8959808MUA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-89598 | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| EDI88128LPS70LB | 66301 | WHITE ELECTRONIC DESIGNS CORPDIV COMMERCIAL DIVISION |
Technical Data | NSN 5962-01-449-6836
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ABCM0.5 VOLTS MINIMUM AND ABC7.0 VOLTS MAXIMUM |
| TIME RATING PER CHACTERISTIC | NSAADR70.00 NANOSECONDS |
| MEMORY DEVICE TYPE | RAM |
| WORD QUANTITY | 131072 |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 32 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8 STATIC RANDOM ACCESS MEMORY (SRAM) LOW POWER, MONOLITHIC SILICON |
| BODY LENGTH | 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM |
| BODY HEIGHT | 0.900 INCHES NOMINAL |
| BODY WIDTH | 0.392 INCHES MINIMUM AND 0.408 INCHES MAXIMUM |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | MONOLITHIC AND ELECTROSTATIC SENSITIVE AND LOW POWER |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |