NSN 5962-01-451-8150
Part Details | MEMORY MICROCIRCUIT
5962-01-451-8150 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: CY7C26325WMB, CY7C263-25WMB, 59628751511LX, 5962-8751511LX, 59628751511LB, 5962-8751511LB, 59628751511LA, 5962-8751511LA, ROMPROM, ROM/PROM, CY7C26325WMB, CY7C263-25WMB, 5962-01-451-8150, 01-451-8150, 5962014518150, 014518150
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 06, 1998 | 01-451-8150 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-451-8150
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| CY7C263-25WMB | 65786 | CYPRESS SEMICONDUCTOR CORPORATIONDBA CYPRESS |
| 5962-8751511LX | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8751511LB | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8751511LA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| ROM/PROM | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| CY7C263-25WMB | 0C7V7 | TELEDYNE E2V US, INC.DBA TELEDYNE E2V (US) |
Technical Data | NSN 5962-01-451-8150
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ABC5.0 VOLTS NOMINAL |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | 8K X8 POWER-SWITCHED, REPROGRAMMABLE PROM, 25 NS |
| FEATURES PROVIDED | ULTRAVIOLET ERASABLE |
| END ITEM IDENTIFICATION | 5865-01-424-5096 |