NSN 5962-01-456-4635

Part Details | DIGITAL MICROCIRCUIT

5962-01-456-4635 A microcircuit specifically designed to generate, modify, or process electrical signals which operate with two distinct or binary states. These states are commonly referred to as on and off, true and false, high and low, or "1" and "0".

Alternate Parts: 59628687508XX, 5962-8687508XX, 59628687508XB, 5962-8687508XB, 59628687508XA, 5962-8687508XA, 596286875, 5962-86875, IDT7130LA45CB, 5962-01-456-4635, 01-456-4635, 5962014564635, 014564635

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUN 13, 199801-456-463531779 ( MICROCIRCUIT, DIGITAL )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-456-4635
Part Number Cage Code Manufacturer
5962-8687508XX67268DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
5962-8687508XB67268DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
5962-8687508XA67268DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
5962-8687567268DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
IDT7130LA45CB61772INTEGRATED DEVICE TECHNOLOGY INC
Technical Data | NSN 5962-01-456-4635
Characteristic Specifications
OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
DESIGN FUNCTION AND QUANTITY1 MEMORY, STATIC RAM
VOLTAGE RATING AND TYPE PER CHARACTERISTICABCM0.5 VOLTS MINIMUM AND ABC7.0 VOLTS MAXIMUM
OPERATING TEMP RANGE-55.0 TO +125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY48 PRINTED CIRCUIT
TERMINAL SURFACE TREATMENT SOLDER
INCLOSURE CONFIGURATION DUAL-IN-LINE
PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
MAXIMUM POWER DISSIPATION RATING1.5 WATTS
STORAGE TEMP RANGE-65.0 TO +150.0 DEG CELSIUS
FEATURES PROVIDED MONOLITHIC
TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
END ITEM IDENTIFICATIONELECTRICAL E/I FSCM 81349
SUPPLEMENTARY FEATURESCIRCUIT FUNCTION - 1K X 8 BIT DUAL PORT CMOS SRAM (MASTER), ACCESS TIME 45 NS (DATA RETENTION)