NSN 5962-01-460-9466
Part Details | MEMORY MICROCIRCUIT
5962-01-460-9466 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: MT5C1008F20883C, MT5C1008F-20883C, 59628959838MTX, 5962-8959838MTX, 59628959838MTB, 5962-8959838MTB, 59628959838MTA, 5962-8959838MTA, 596289598, 5962-89598, L7C109MMB20, ED188130CS20FB, 5962-01-460-9466, 01-460-9466, 5962014609466, 014609466
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 21, 1998 | 01-460-9466 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-460-9466
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MT5C1008F-20883C | 0EU86 | AUSTIN SEMICONDUCTOR INCDBA MICROSS COMPONENTS |
| 5962-8959838MTX | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8959838MTB | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8959838MTA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-89598 | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| L7C109MMB20 | 65896 | LOGIC DEVICES INCORPORATED |
| ED188130CS20FB | 66301 | WHITE ELECTRONIC DESIGNS CORPDIV COMMERCIAL DIVISION |
Technical Data | NSN 5962-01-460-9466
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ABCM0.5 VOLTS MINIMUM AND ABC7.0 VOLTS MAXIMUM |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 32 LEADLESS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X8 STACTIC RANDOM ACCESS MEMORY (SRAM) LOW POWER, MONOLITHIC SILICON |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | LOW POWER AND MONOLITHIC |
| SPECIAL FEATURES | CIRCUIT FUNCTION 128K X 8 STANDARD POWER CMOS SRAM DUAL CE / ACCESS TIME 20 NS |
| TEST DATA DOCUMENT | 96906-MIL-STD-833 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| END ITEM IDENTIFICATION | 1055-01-251-9756 E/I FSCM 67268 |